Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(3+Tab) TO-220AB Rail

HGTP12N60A4D Series 600 V 54 A N-Channel IGBT with Anti Parallel Hyperfast Diode

Insulated Gate Bipolar Transistor, 54A I(C), 600V V(BR)CES, N-Channel, TO-220AB

The HGTP12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.